(Technical Parameters)
Parameter Category Specification Details
Model UR1BG3-015N-1KC-2SA-N/CN (Complete System)
Measurement Principle Triangular Reflection Method
Laser Type Red semiconductor laser (Visible beam, Class 2M)
Laser Wavelength 650 nm
Measurement Range 15 ±4.5 mm (Total range of 9mm, from 10.5mm to 19.5mm from the sensor head)
Standing Distance 15 mm (Recommended working distance to target)
Spot Diameter Extremely small: Approx. 20 × 60 µm (at a 15mm standing distance) - A key feature.
Linear Output Range ±4.5 mm (around the 15mm standing distance)
Repeatability 0.2 µm (Ultra-high precision)
Linearity ±0.1% of F.S. (Full Scale = 9mm range)
Light-Receiving Element CMOS image sensor (Provides high accuracy and stability)
Sampling Rate 2.5 kHz
Outputs Analog Output: 4-20 mA
Digital Communication: RS-485 (Modbus RTU protocol)
Power Supply 12 to 24 VDC (±10%), ripple P-P: 10% max.
Current Consumption 80 mA max. (excluding analog output current)
Connection Method -2SA Option: Specific cable set. *Typically includes cables for head-to-amplifier and amplifier power/communication. Exact lengths (e.g., 2m) should be confirmed with the supplier.*
Amplifier Unit -1KC: Separate, compact amplifier
Software Support /CN: Configuration software supports Chinese language interface.
Housing Material PPS (Sensor Head), Aluminum Die-cast (Amplifier Unit)
Ingress Protection (IP Rating) IP67 (Sensor Head) / IP66 (Amplifier Unit)
Ambient Operating Temperature -10 to +55 °C (Sensor Head & Amplifier, with no freezing or condensation)
Ambient Operating Humidity 35 to 85% RH
Vibration Resistance 10 to 55 Hz, Double amplitude 1.5 mm, X, Y, Z directions for 2 hours each
Shock Resistance 500 m/s² (approx. 50G), X, Y, Z directions 3 times each
Weight Sensor Head: Approx. 70 g / Amplifier: Approx. 200 g