The ABB 3BHE019719R0101 GVC736BE101 is a high-power InGaN Gate-Commutated Thyristor (IGCT) module designed for applications requiring high-efficiency power conversion in industrial control systems.
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The ABB 3BHE019719R0101 GVC736BE101 is a high-power InGaN Gate-Commutated Thyristor (IGCT) module designed for applications requiring high-efficiency power conversion in industrial control systems.
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Operating Voltage:220 V
Output Frequency:30 kHz
Certified Product:Yes
Series:GVC736BE101
Material Coding:3BHE019719R0101
Brand:ABB
The ABB 3BHE019719R0101 GVC736BE101 IGCT module is engineered for exceptional performance in high-power applications, offering unparalleled efficiency and reliability.
Designed with advanced semiconductor technology, this module ensures low conduction losses and high switching speeds, making it ideal for applications such as industrial drives, electric vehicle charging stations, and renewable energy systems.
Featuring a robust air-cooling system, the module is optimized for continuous operation under high thermal loads, ensuring stable performance over extended periods.
With ISO 9001 certification and CE marking, the ABB 3BHE019719R0101 complies with the highest international standards for quality and safety, providing peace of mind for users.
The compact yet powerful design allows for easy integration into existing control systems, minimizing installation time and cost, while its modular architecture facilitates scalability and upgradeability.
