IC DRAM 512MBIT PARALLEL 66TSOP
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IC DRAM 512MBIT PARALLEL 66TSOP
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Storage capacity: 512Mb
Memory organization: 32M x 16
Memory interface: parallel connection
Clock frequency: 200 MHz
Write cycle time - words, pages: 15ns
Access time: 700 ps
Voltage power supply: 2.5V~2.7V
Working temperature:- 40°C ~ 85°C（TA）
Installation type: surface mount type
Encapsulation/Shell: 66-TSSOP